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dc.contributor.authorTsai, Min-Anen_US
dc.contributor.authorTseng, Ping-Chenen_US
dc.contributor.authorChen, Hsin-Chuen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorYu, Peichenen_US
dc.date.accessioned2014-12-08T15:37:39Z-
dc.date.available2014-12-08T15:37:39Z-
dc.date.issued2011-01-03en_US
dc.identifier.issn1094-4087en_US
dc.identifier.urihttp://dx.doi.org/10.1364/OE.19.000A28en_US
dc.identifier.urihttp://hdl.handle.net/11536/25900-
dc.description.abstractEnhanced photoelectric conversion is demonstrated in a crystalline silicon (c-Si) solar cell with frustum nanorod arrays (FNAs), fabricated using colloidal lithography and reactive-ion etching techniques. Under a simulated one-sun condition, the cell with FNAs improves the power conversion efficiency by nearly 30%, compared to a conventional wet-chemical-textured reference. The enhancement mostly arises from the superior antireflective properties for wavelengths between 400 nm and 1000 nm. In that spectral range, we show that photons gained by reflection reduction directly contribute to collected carriers without auxiliary losses due to nano-fabrication. Moreover, the omnidirectional antireflection of FNAs is also investigated using an angle-resolved reflectance spectroscopy. The dimensions of FNAs are further analyzed with numerical calculations based on Maxwell's equations. The optimized short-circuit current density achieves nearly 40 mA/cm(2), corresponding to a 16% enhancement compared to the conventional device. (C)2010 Optical Society of Americaen_US
dc.language.isoen_USen_US
dc.titleEnhanced conversion efficiency of a crystalline silicon solar cell with frustum nanorod arraysen_US
dc.typeArticleen_US
dc.identifier.doi10.1364/OE.19.000A28en_US
dc.identifier.journalOPTICS EXPRESSen_US
dc.citation.volume19en_US
dc.citation.issue1en_US
dc.citation.spageA28en_US
dc.citation.epageA34en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000285915300004-
dc.citation.woscount33-
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