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dc.contributor.authorSyu, Yong-Enen_US
dc.contributor.authorChang, Ting-Changen_US
dc.contributor.authorTsai, Chih-Tsungen_US
dc.contributor.authorChang, Geng-Weien_US
dc.contributor.authorTsai, Tsung-Mingen_US
dc.contributor.authorChang, Kuan-Changen_US
dc.contributor.authorTai, Ya-Hsiangen_US
dc.contributor.authorTsai, Ming-Jinnen_US
dc.contributor.authorSze, Simon M.en_US
dc.date.accessioned2014-12-08T15:37:39Z-
dc.date.available2014-12-08T15:37:39Z-
dc.date.issued2011-01-01en_US
dc.identifier.issn1099-0062en_US
dc.identifier.urihttp://dx.doi.org/10.1149/1.3615823en_US
dc.identifier.urihttp://hdl.handle.net/11536/25908-
dc.description.abstractThe switching layer with SiGeO(x)/SiGeON structure is investigated to improve the electrical characteristics of resistive nonvolatile memory. A bipolar resistance switching behavior owning inferior stability was observed in Pt/SiGeO(x)/TiN memory cells. To obtain practical memory, a convenient and compatible SiGeON (similar to 5 nm) is introduced at SiGeO(x)/anode interface to stabilize the disruption length of filaments near anode electrode. Compared with Pt/SiGeO(x)/TiN memory cells, the proposed Pt/SiGeO(x)/SiGeON/TiN cells is effective at minimizing the dispersions of memory switching parameters. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3615823] All rights reserved.en_US
dc.language.isoen_USen_US
dc.titleImproving Resistance Switching Characteristics with SiGeO(x)/SiGeON Double Layer for Nonvolatile Memory Applicationsen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/1.3615823en_US
dc.identifier.journalELECTROCHEMICAL AND SOLID STATE LETTERSen_US
dc.citation.volume14en_US
dc.citation.issue10en_US
dc.citation.spageH419en_US
dc.citation.epageH421en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
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