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dc.contributor.authorSun, Yingen_US
dc.contributor.authorChien, Shang-Chiehen_US
dc.contributor.authorYip, Hin-Lapen_US
dc.contributor.authorZhang, Yongen_US
dc.contributor.authorChen, Kung-Shihen_US
dc.contributor.authorZeigler, David F.en_US
dc.contributor.authorChen, Fang-Chungen_US
dc.contributor.authorLin, Baopingen_US
dc.contributor.authorJen, Alex K. -Y.en_US
dc.date.accessioned2014-12-08T15:37:43Z-
dc.date.available2014-12-08T15:37:43Z-
dc.date.issued2011en_US
dc.identifier.issn0959-9428en_US
dc.identifier.urihttp://hdl.handle.net/11536/25930-
dc.identifier.urihttp://dx.doi.org/10.1039/c1jm11564ben_US
dc.description.abstractTwo new semiconducting polymers based on indacenodithiophene and thiadiazolo[3,4-c]pyridine units were synthesized via Stille coupling polymerization. The polymers, PIDTPyT and PIDTDTPyT, exhibited main absorption bands in the range of 550-800 nm while their absorption maxima were located at around 700 nm in films. With two additional thiophene spacers, PIDTDTPyT showed a broader absorption band but a 20 nm blue-shifted maximum peak compared to that of PIDTPyT. Both of the polymers possess low bandgaps (similar to 1.6 eV) and deep energy levels for both the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO). Organic field-effect transistors (OFETs) device measurements indicate that PIDTPyT and PIDTDTPyT have high hole carrier mobilities of 0.066 and 0.045 cm(2) V(-1) s(-1), respectively, with the on/off ratio on the order of 10(6). Bulk heterojunction photovoltaic devices consisting of the copolymers and PC(71)BM gave power conversion efficiencies (PCE) as high as 3.91% with broadband photo-response in the range of 300-800 nm. The relationships between the photovoltaic performance and film morphology, energy levels, hole mobilities are discussed.en_US
dc.language.isoen_USen_US
dc.titleHigh-mobility low-bandgap conjugated copolymers based on indacenodithiophene and thiadiazolo[3,4-c]pyridine units for thin film transistor and photovoltaic applicationsen_US
dc.typeArticleen_US
dc.identifier.doi10.1039/c1jm11564ben_US
dc.identifier.journalJOURNAL OF MATERIALS CHEMISTRYen_US
dc.citation.volume21en_US
dc.citation.issue35en_US
dc.citation.spage13247en_US
dc.citation.epage13255en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.department顯示科技研究所zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of Displayen_US
dc.identifier.wosnumberWOS:000294176600018-
dc.citation.woscount37-
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