完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Kuo, Chih-Yin | en_US |
dc.contributor.author | Su, Ming-Shin | en_US |
dc.contributor.author | Ku, Ching-Shun | en_US |
dc.contributor.author | Wang, Shu-Min | en_US |
dc.contributor.author | Lee, Hsin-Yi | en_US |
dc.contributor.author | Wei, Kung-Hwa | en_US |
dc.date.accessioned | 2014-12-08T15:37:44Z | - |
dc.date.available | 2014-12-08T15:37:44Z | - |
dc.date.issued | 2011 | en_US |
dc.identifier.issn | 0959-9428 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/25943 | - |
dc.identifier.uri | http://dx.doi.org/10.1039/c0jm04417b | en_US |
dc.description.abstract | We have prepared thin films of PbSe quantum dots (QDs) featuring three different ligands, oleic acid (OA), butylamine (BA), and 1,2-ethanedithiol (EDT), which have pronounced affects on the arrangement and photovoltaic performance of the PbSe QDs in the thin films. Transmission electron microscopy revealed that ligands that altered the inter-QD spacing induced significant changes in the packing of the PbSe QDs in localized regions of small areas (300 x 300 nm) of the thin films: from a superlattice of OA-capped PbSe QDs to a chaotic pattern of EDT-capped PbSe QDs. Using a synchrotron X-ray reflectivity probe and data fitting, we determined that the roughness decreased and the average densities increased for large-area (1.5 x 1.5 cm) PbSe QD thin films capped with BA and EDT, relative to those of the OA-capped PbSe QD film. In particular, the PbSe QDs' vertical packing density, which is critical for charge transport, increased substantially for the system incorporating EDT ligands. As a result, devices containing the EDT-treated PbSe QD film as the active layer displayed much improved power conversion efficiencies (PCEs) relative to those of corresponding devices featuring either the OA-or BA-capped PbSe QD films as active layers. Adopting a layer-by-layer technique, we fabricated a EDT-capped PbSe QD device that exhibited a PCE of 2.45%. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Ligands affect the crystal structure and photovoltaic performance of thin films of PbSe quantum dots | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1039/c0jm04417b | en_US |
dc.identifier.journal | JOURNAL OF MATERIALS CHEMISTRY | en_US |
dc.citation.volume | 21 | en_US |
dc.citation.issue | 31 | en_US |
dc.citation.spage | 11605 | en_US |
dc.citation.epage | 11612 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.identifier.wosnumber | WOS:000293190200024 | - |
dc.citation.woscount | 23 | - |
顯示於類別: | 期刊論文 |