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dc.contributor.authorKuo, Chih-Yinen_US
dc.contributor.authorSu, Ming-Shinen_US
dc.contributor.authorKu, Ching-Shunen_US
dc.contributor.authorWang, Shu-Minen_US
dc.contributor.authorLee, Hsin-Yien_US
dc.contributor.authorWei, Kung-Hwaen_US
dc.date.accessioned2014-12-08T15:37:44Z-
dc.date.available2014-12-08T15:37:44Z-
dc.date.issued2011en_US
dc.identifier.issn0959-9428en_US
dc.identifier.urihttp://hdl.handle.net/11536/25943-
dc.identifier.urihttp://dx.doi.org/10.1039/c0jm04417ben_US
dc.description.abstractWe have prepared thin films of PbSe quantum dots (QDs) featuring three different ligands, oleic acid (OA), butylamine (BA), and 1,2-ethanedithiol (EDT), which have pronounced affects on the arrangement and photovoltaic performance of the PbSe QDs in the thin films. Transmission electron microscopy revealed that ligands that altered the inter-QD spacing induced significant changes in the packing of the PbSe QDs in localized regions of small areas (300 x 300 nm) of the thin films: from a superlattice of OA-capped PbSe QDs to a chaotic pattern of EDT-capped PbSe QDs. Using a synchrotron X-ray reflectivity probe and data fitting, we determined that the roughness decreased and the average densities increased for large-area (1.5 x 1.5 cm) PbSe QD thin films capped with BA and EDT, relative to those of the OA-capped PbSe QD film. In particular, the PbSe QDs' vertical packing density, which is critical for charge transport, increased substantially for the system incorporating EDT ligands. As a result, devices containing the EDT-treated PbSe QD film as the active layer displayed much improved power conversion efficiencies (PCEs) relative to those of corresponding devices featuring either the OA-or BA-capped PbSe QD films as active layers. Adopting a layer-by-layer technique, we fabricated a EDT-capped PbSe QD device that exhibited a PCE of 2.45%.en_US
dc.language.isoen_USen_US
dc.titleLigands affect the crystal structure and photovoltaic performance of thin films of PbSe quantum dotsen_US
dc.typeArticleen_US
dc.identifier.doi10.1039/c0jm04417ben_US
dc.identifier.journalJOURNAL OF MATERIALS CHEMISTRYen_US
dc.citation.volume21en_US
dc.citation.issue31en_US
dc.citation.spage11605en_US
dc.citation.epage11612en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000293190200024-
dc.citation.woscount23-
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