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dc.contributor.authorWang, De-Yinen_US
dc.contributor.authorHuang, Chien-Haoen_US
dc.contributor.authorWu, Yun-Chenen_US
dc.contributor.authorChen, Teng-Mingen_US
dc.date.accessioned2014-12-08T15:37:45Z-
dc.date.available2014-12-08T15:37:45Z-
dc.date.issued2011-01-01en_US
dc.identifier.issn0959-9428en_US
dc.identifier.urihttp://dx.doi.org/10.1039/c1jm00080ben_US
dc.identifier.urihttp://hdl.handle.net/11536/25952-
dc.description.abstractIn this paper, a cyan-emitting phosphor BaZrSi(3)O(9):Eu(2+) was synthesized and evaluated as a candidate for white light emitting diodes (WLEDs). This phosphor shows strong and broad absorption in 380-420 nm region, and the emission intensity of the optimized BaZrSi(3)O(9):Eu(2+) was found to be 90% and 198% of that of the commercial BaMgAl(10)O(17):Eu(2+) (BAM:Eu(2+)) under excitation at 405 nm and 420 nm, respectively. Upon excitation at 405 nm, the quantum efficiency of the optimized BaZrSi(3)O(9):Eu(2+) is 83% of that of BAM:Eu(2+). The performance of this phosphor was further tested to fabricate white LED lamps. By coating BaZrSi(3)O(9):Eu(2+) with a green-emitting (Ba,Sr)(2)SiO(4):Eu(2+) and a red-emitting CaAlSiN(3):Eu(2+) on a near-ultraviolet (405 nm) LED chip, driven by a 350 mA forward bias current, intense warm white light with a color rendering index of 90 has been produced.en_US
dc.language.isoen_USen_US
dc.titleBaZrSi(3)O(9):Eu(2+): a cyan-emitting phosphor with high quantum efficiency for white light-emitting diodesen_US
dc.typeArticleen_US
dc.identifier.doi10.1039/c1jm00080ben_US
dc.identifier.journalJOURNAL OF MATERIALS CHEMISTRYen_US
dc.citation.volume21en_US
dc.citation.issue29en_US
dc.citation.spage10818en_US
dc.citation.epage10822en_US
dc.contributor.department應用化學系zh_TW
dc.contributor.departmentDepartment of Applied Chemistryen_US
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