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dc.contributor.authorChen, Hsiangen_US
dc.contributor.authorKao, Chyuan-Hauren_US
dc.contributor.authorLu, Tien-Changen_US
dc.contributor.authorShei, Shih-Changen_US
dc.date.accessioned2014-12-08T15:37:47Z-
dc.date.available2014-12-08T15:37:47Z-
dc.date.issued2011en_US
dc.identifier.issn0078-5466en_US
dc.identifier.urihttp://hdl.handle.net/11536/25977-
dc.description.abstractThis study investigates the reliability physics of the reverse bias luminescence (RBL) of InGaN/GaN light emitting diodes. Optical and electrical characterization techniques including surface temperature measurements, 2D X-ray fluorescent element analysis, and 2D electroluminescence (EL) measurements reveal the leakage current distribution and the origin of the reverse bias leakage current. Using these techniques, this study examines the electroluminescence behavior and surface temperature distribution in forward bias and reverse bias conditions. Results show that the reverse bias EL originates from hot electron-induced emission, which in turn is due to the leakage current in the high electric field region caused by metal contact abnormalities. The optical and electrical characterization techniques adopted in this study are a promising screening tool for correlating device failures with fabrication processes.en_US
dc.language.isoen_USen_US
dc.subjectGaN LEDen_US
dc.subjectelectroluminescenceen_US
dc.subjectreverse-biasen_US
dc.subjectleakage currenten_US
dc.subjecthot carrieren_US
dc.titleOptical and electrical characterization of reverse bias luminescence in InGaN light emitting diodesen_US
dc.typeArticleen_US
dc.identifier.journalOPTICA APPLICATAen_US
dc.citation.volume41en_US
dc.citation.issue1en_US
dc.citation.spage195en_US
dc.citation.epage205en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000290980100018-
dc.citation.woscount1-
Appears in Collections:Articles