完整後設資料紀錄
DC 欄位語言
dc.contributor.authorLiao, Hung-Chouen_US
dc.contributor.authorChantarat, Naratipen_US
dc.contributor.authorChen, San-Yuanen_US
dc.contributor.authorPeng, Cheng-Hsiungen_US
dc.date.accessioned2014-12-08T15:37:48Z-
dc.date.available2014-12-08T15:37:48Z-
dc.date.issued2011en_US
dc.identifier.issn0013-4651en_US
dc.identifier.urihttp://hdl.handle.net/11536/25986-
dc.identifier.urihttp://dx.doi.org/10.1149/1.3585668en_US
dc.description.abstractThe CdS nanocrystals with different aspect ratios (ARs) can be synthesized directly in the presence of conjugated polymer poly(3-hexylthiophene-2,5-diyl) (P3HT). The UV-vis spectra of the composite films show a blue shift of the pi-pi* transition band with an increasing aspect ratio (AR) of the CdS nanocrystals, which was attributed to the destruction of the ordered structure of polymer chains as supported by PL measurements. Atomic force microscope measurements on P3HT/CdS film also demonstrate the aggregation of CdS nanocrystal in the P3HT matrix is more apparent for the CdS nanocrystals of AR 4 than that of AR 16, indicating a stronger interaction between P3HT and CdS for a larger AR (16), which is favorable for the network structure and formation of percolation paths to increase the transport properties of the P3HT/CdS solar cells. Therefore, a higher power conversion efficiencies (PCE) up to 2.95% can be obtained for the in-situ-grown P3HT/CdS with AR 16 upon annealing treatment at 160 degrees C for 60 min. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3585668] All rights reserved.en_US
dc.language.isoen_USen_US
dc.titleAnnealing Effect on Photovoltaic Performance of Hybrid P3HT/In-Situ Grown CdS Nanocrystal Solar Cellsen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/1.3585668en_US
dc.identifier.journalJOURNAL OF THE ELECTROCHEMICAL SOCIETYen_US
dc.citation.volume158en_US
dc.citation.issue7en_US
dc.citation.spageE67en_US
dc.citation.epageE72en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000290870700030-
dc.citation.woscount6-
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