Light-Enhanced Bias Stress Effect on Amorphous In-Ga-Zn-O Thin-film Transistor with Lights of Varying Colors

doi:10.1149/1.3584088

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Chen, Wei-Tsung	en_US
dc.contributor.author	Hsueh, Hsiu-Wen	en_US
dc.contributor.author	Zan, Hsiao-Wen	en_US
dc.contributor.author	Tsai, Chuang-Chuang	en_US
dc.date.accessioned	2014-12-08T15:37:48Z	-
dc.date.available	2014-12-08T15:37:48Z	-
dc.date.issued	2011	en_US
dc.identifier.issn	1099-0062	en_US
dc.identifier.uri	http://hdl.handle.net/11536/25992	-
dc.identifier.uri	http://dx.doi.org/10.1149/1.3584088	en_US
dc.description.abstract	This study investigates the light-color-dependent bias stress effect on an amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT). The color of incident photons with energies lower than the optical band gap of IGZO (3.2 eV) was varied from blue to infrared. Regardless of the bias polarity, light is regarded as a promoter for bias-stress-induced instability. The light response of the a-IGZO TFT is both color-and bias-polarity-dependent. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3584088] All rights reserved.	en_US
dc.language.iso	en_US	en_US
dc.title	Light-Enhanced Bias Stress Effect on Amorphous In-Ga-Zn-O Thin-film Transistor with Lights of Varying Colors	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1149/1.3584088	en_US
dc.identifier.journal	ELECTROCHEMICAL AND SOLID STATE LETTERS	en_US
dc.citation.volume	14	en_US
dc.citation.issue	7	en_US
dc.citation.spage	H297	en_US
dc.citation.epage	H299	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000290276400022	-
dc.citation.woscount	7	-
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