完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Liu, Wei-Ren | en_US |
dc.contributor.author | Huang, Chien-Hao | en_US |
dc.contributor.author | Wu, Chih-Pin | en_US |
dc.contributor.author | Chiu, Yi-Chen | en_US |
dc.contributor.author | Yeh, Yao-Tsung | en_US |
dc.contributor.author | Chen, Teng-Ming | en_US |
dc.date.accessioned | 2014-12-08T15:37:49Z | - |
dc.date.available | 2014-12-08T15:37:49Z | - |
dc.date.issued | 2011-01-01 | en_US |
dc.identifier.issn | 0959-9428 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1039/c1jm10765h | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/26001 | - |
dc.description.abstract | A highly intense blue-emitting phosphor NaSrBO(3):Ce(3+), peaking at 400 nm was synthesized by a solid state reaction. The crystal structure, luminescence properties and quantum efficiency of NaSrBO(3):Ce(3+) phosphors, as well as their thermal quenching capabilities and the fabrication of a 370 nm UV-chip and R/G/B phosphors were investigated for the first time. The composition-optimized NaSrBO(3):1% Ce(3+) exhibited high external quantum efficiency of 89% of the blue-emitting, commercial compound, BaMgAl(10)O(17):Eu(2+) (BAM:Eu(2+)). The color purity of as-synthesized NaSrBO(3):1% Ce(3+) phosphor is much better than that of BAM:Eu(2+). By using a GaN-based UV-LED (370 nm) and a mixture of blue-emitting NaSrBO(3):Ce(3+), green-emitting (Ba,Sr)(2)SiO(4):Eu(2+) and red-emitting CaAlSiN(3):Eu(2+) phosphors as light converters, we constructed an intense white light emitting diode. The LED device exhibited an excellent color-rendering index R(a) of 93.13 at a correlated color temperature of 5763 K with CIE coordinates of (0.324,0.337) and a maximum lumen efficacy of 26.2 lmW(-1). Based on the results, we are currently evaluating the potential application of NaSrBO(3):Ce(3+) as a blue-emitting UV convertible phosphor. | en_US |
dc.language.iso | en_US | en_US |
dc.title | High efficiency and high color purity blue-emitting NaSrBO(3):Ce(3+) phosphor for near-UV light-emitting diodes | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1039/c1jm10765h | en_US |
dc.identifier.journal | JOURNAL OF MATERIALS CHEMISTRY | en_US |
dc.citation.volume | 21 | en_US |
dc.citation.issue | 19 | en_US |
dc.citation.spage | 6869 | en_US |
dc.citation.epage | 6874 | en_US |
dc.contributor.department | 應用化學系 | zh_TW |
dc.contributor.department | Department of Applied Chemistry | en_US |
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