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dc.contributor.authorHuang, Huei-Minen_US
dc.contributor.authorWu, Yung-Chien_US
dc.contributor.authorLu, Tien-Changen_US
dc.date.accessioned2014-12-08T15:37:50Z-
dc.date.available2014-12-08T15:37:50Z-
dc.date.issued2011en_US
dc.identifier.issn0013-4651en_US
dc.identifier.urihttp://hdl.handle.net/11536/26025-
dc.identifier.urihttp://dx.doi.org/10.1149/1.3561422en_US
dc.description.abstractWe study the basal plane stacking faults (BSFs) related optical properties in a-plane AlGaN alloys with different Al composition ranging from 0 to 0.28. The low-temperature photoluminescence (PL) spectra for AlGaN show two dominant peaks attributed to the emission of near band edge and BSFs-bound excitons, respectively. The PL integrated intensity ratio of the BSFs to NBE is found to correlate to the density of BSFs observed by the transmission electron microscopy. Finally, the exciton localization behaviors of BSFs in a-plane AlGaN alloys is observed and discussed in this study. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3561422] All rights reserved.en_US
dc.language.isoen_USen_US
dc.titleExciton Localization Behaviors of Basal Stacking Faults in a-Plane AlGaN Alloysen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/1.3561422en_US
dc.identifier.journalJOURNAL OF THE ELECTROCHEMICAL SOCIETYen_US
dc.citation.volume158en_US
dc.citation.issue5en_US
dc.citation.spageH491en_US
dc.citation.epageH495en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000288867700082-
dc.citation.woscount2-
Appears in Collections:Articles


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