Exciton Localization Behaviors of Basal Stacking Faults in a-Plane AlGaN Alloys

doi:10.1149/1.3561422

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DC 欄位	值	語言
dc.contributor.author	Huang, Huei-Min	en_US
dc.contributor.author	Wu, Yung-Chi	en_US
dc.contributor.author	Lu, Tien-Chang	en_US
dc.date.accessioned	2014-12-08T15:37:50Z	-
dc.date.available	2014-12-08T15:37:50Z	-
dc.date.issued	2011	en_US
dc.identifier.issn	0013-4651	en_US
dc.identifier.uri	http://hdl.handle.net/11536/26025	-
dc.identifier.uri	http://dx.doi.org/10.1149/1.3561422	en_US
dc.description.abstract	We study the basal plane stacking faults (BSFs) related optical properties in a-plane AlGaN alloys with different Al composition ranging from 0 to 0.28. The low-temperature photoluminescence (PL) spectra for AlGaN show two dominant peaks attributed to the emission of near band edge and BSFs-bound excitons, respectively. The PL integrated intensity ratio of the BSFs to NBE is found to correlate to the density of BSFs observed by the transmission electron microscopy. Finally, the exciton localization behaviors of BSFs in a-plane AlGaN alloys is observed and discussed in this study. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3561422] All rights reserved.	en_US
dc.language.iso	en_US	en_US
dc.title	Exciton Localization Behaviors of Basal Stacking Faults in a-Plane AlGaN Alloys	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1149/1.3561422	en_US
dc.identifier.journal	JOURNAL OF THE ELECTROCHEMICAL SOCIETY	en_US
dc.citation.volume	158	en_US
dc.citation.issue	5	en_US
dc.citation.spage	H491	en_US
dc.citation.epage	H495	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000288867700082	-
dc.citation.woscount	2	-
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