標題: High Tensile Stress with Minimal Dopant Diffusion by Low Temperature Microwave Anneal
作者: Lee, Yao-Jen
Lu, Yu-Lun
Mu, Zheng-Chang
Hsueh, Fu-Kuo
Chao, Tien-Sheng
Wu, Ching-Yi
電子物理學系
Department of Electrophysics
公開日期: 2011
摘要: In this letter, rapid thermal annealing (RTA) and microwave annealing (MA) are compared to demonstrate the dopant activation. Using microwave annealing, the dopant in the Si was well-activated and showed suppressed dopant diffusion, as compared to traditional high temperature RTA. In addition, SiN(x) films after low temperature MA treatment presented higher tensile stress than the films annealed by RTA. Therefore, this MA approach could potentially be applied to these behaviors of I distribution and higher tensile stress SiNx film may be useful in contact etch-stop layer or stress memorization technique in the fabrication of small pitch nanoscaled n-channel Metal-Oxide-Semiconductor Field Effect Transistors. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3536462] All rights reserved.
URI: http://hdl.handle.net/11536/26039
http://dx.doi.org/10.1149/1.3536462
ISSN: 1099-0062
DOI: 10.1149/1.3536462
期刊: ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume: 14
Issue: 5
起始頁: H191
結束頁: H193
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