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dc.contributor.authorChen, Yu-Hanen_US
dc.contributor.authorJeng, U-Seren_US
dc.contributor.authorLeu, Jihperngen_US
dc.date.accessioned2014-12-08T15:37:56Z-
dc.date.available2014-12-08T15:37:56Z-
dc.date.issued2011en_US
dc.identifier.issn0013-4651en_US
dc.identifier.urihttp://hdl.handle.net/11536/26060-
dc.identifier.urihttp://dx.doi.org/10.1149/1.3529246en_US
dc.description.abstractThe interaction between a polystyrene-b-polybutadiene-b-polystyrene (SBS) porogen and a low-k methylsilsesquioxane (MSQ) matrix under different curing profiles and their impact on porogen size were studied by grazing incidence small-angle X-ray scattering, viscosity measurement, and Fourier transform infrared analysis. For slow curing, significant porogen diffusion and aggregation occurred between 100 and 170 degrees C, at which the porogen size increased from 12 to 32 nm. The interaction mechanism between porogen and the MSQ matrix and its correlation with porogen size during the thermal cure process were elucidated. The aggregation of the SBS porogen was greatly influenced by the microstructure of the MSQ matrix at three controlling temperatures; namely, (1) glass transition temperature, T(g) (similar to 100 degrees C), (2) onset temperature (160 degrees C) for transforming cage to network structure, and (3) immobilization temperature (170 degrees C). In contrast, a rapid curing rate enabled the formation of small porogen size (similar to 12 nm) in the hybrid films and yielded better mechanical strength. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3529246] All rights reserved.en_US
dc.language.isoen_USen_US
dc.titleEffect of Curing on the Porogen Size in the Low-k MSQ/SBS Hybrid Filmsen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/1.3529246en_US
dc.identifier.journalJOURNAL OF THE ELECTROCHEMICAL SOCIETYen_US
dc.citation.volume158en_US
dc.citation.issue3en_US
dc.citation.spageG52en_US
dc.citation.epageG57en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000286677900061-
dc.citation.woscount4-
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