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dc.contributor.authorChen, I-Chenen_US
dc.contributor.authorChen, Yi-Daren_US
dc.contributor.authorHsieh, Chih-Chienen_US
dc.contributor.authorKuo, Cheng-Huangen_US
dc.contributor.authorChang, Li-Chuanen_US
dc.date.accessioned2014-12-08T15:37:57Z-
dc.date.available2014-12-08T15:37:57Z-
dc.date.issued2011en_US
dc.identifier.issn0013-4651en_US
dc.identifier.urihttp://hdl.handle.net/11536/26062-
dc.identifier.urihttp://dx.doi.org/10.1149/1.3533673en_US
dc.description.abstractA new Ag/La bilayer metal contact scheme has been developed for producing high reflectance and low contact resistivity ohmic contacts to p-GaN. An excellent reflectance of over 91% at 460 nm wavelength and low specific contact resistivity of 1.6 x 10(-4) Omega cm(2) were obtained from Ag/La (150/20 nm) contact annealed at 450 degrees C for 1 min. The La overlayer was oxidized to form La(2)O(3) when exposed to air, which effectively suppresses exposure of the Ag layer to oxygen atmosphere during annealing, leading to a good ohmic contact with smooth surface morphology and high reflectance. Additionally, Ag/La contacts show excellent thermal stability after a long thermal annealing at 300 degrees C in air ambient. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3533673] All rights reserved.en_US
dc.language.isoen_USen_US
dc.titleHighly Reflective Ag/La Bilayer Ohmic Contacts to p-Type GaNen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/1.3533673en_US
dc.identifier.journalJOURNAL OF THE ELECTROCHEMICAL SOCIETYen_US
dc.citation.volume158en_US
dc.citation.issue3en_US
dc.citation.spageH285en_US
dc.citation.epageH288en_US
dc.contributor.department照明與能源光電研究所zh_TW
dc.contributor.departmentInstitute of Lighting and Energy Photonicsen_US
dc.identifier.wosnumberWOS:000286677900080-
dc.citation.woscount13-
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