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dc.contributor.authorWu, Chia-Yangen_US
dc.contributor.authorLee, Wen-Hsien_US
dc.contributor.authorChang, Shih-Chiehen_US
dc.contributor.authorCheng, Yi-Lungen_US
dc.contributor.authorWang, Ying-Langen_US
dc.date.accessioned2014-12-08T15:37:57Z-
dc.date.available2014-12-08T15:37:57Z-
dc.date.issued2011en_US
dc.identifier.issn0013-4651en_US
dc.identifier.urihttp://hdl.handle.net/11536/26063-
dc.identifier.urihttp://dx.doi.org/10.1149/1.3537825en_US
dc.description.abstractRuthenium (Ru) and ruthenium nitride (RuN) thin films have been investigated as candidates for barrier layers in copper (Cu) damascene processes. In order to study the thermal stability of the Ru and RuN films, the as-deposited films were annealed by rapid thermal annealing (RTA), and the film resistance was real-time measured by a four-point probe, which was embedded in the RTA tool. The X-ray diffraction data show that the grain size of Ru decreased with the increase of the nitrogen (N) content. The Ru phases gradually changed to the RuN phases, and the resistivity of the RuN films decreased with annealing time due to nitrogen effusion. Discontinuous RuN films were found when the annealing temperature was higher than 800 degrees C and then caused a poor Cu diffusion barrier property. We also demonstrated that the Cu film could be directly electroplated on the RuN films with adequate adhesion. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3537825] All rights reserved.en_US
dc.language.isoen_USen_US
dc.titleEffect of Annealing on the Microstructure and Electrical Property of RuN Thin Filmsen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/1.3537825en_US
dc.identifier.journalJOURNAL OF THE ELECTROCHEMICAL SOCIETYen_US
dc.citation.volume158en_US
dc.citation.issue3en_US
dc.citation.spageH338en_US
dc.citation.epageH342en_US
dc.contributor.department照明與能源光電研究所zh_TW
dc.contributor.departmentInstitute of Lighting and Energy Photonicsen_US
dc.identifier.wosnumberWOS:000286677900090-
dc.citation.woscount8-
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