標題: Influence of Nanocrystals on Resistive Switching Characteristic in Binary Metal Oxides Memory Devices
作者: Tsai, Yu-Ting
Chang, Ting-Chang
Lin, Chao-Cheng
Chen, Shih-Cheng
Chen, Chi-Wen
Sze, Simon M.
Yeh (Hung), Fon-Shan
Tseng, Tseung-Yuen
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2011
摘要: The resistive random access memory has attracted much attention for nonvolatile memory application in recent years. However, there is an issue about variations of switching parameters such as set voltage and conductivity of resistance state in resistive switching memory. The variations may cause not only switching error but also reading error during operation. We investigated the switching performance of binary metal oxide as a resistive switching layer embedded with and without metal nanocrystals. Compared with the conventional memory structure, the memory embedded with metal nanocrystals shows better stability, preferable uniformity for the next generation nonvolatile memory application. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3531843] All rights reserved.
URI: http://hdl.handle.net/11536/26088
http://dx.doi.org/10.1149/1.3531843
ISSN: 1099-0062
DOI: 10.1149/1.3531843
期刊: ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume: 14
Issue: 3
起始頁: H135
結束頁: H138
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