完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | YEN, ST | en_US |
dc.contributor.author | TSAI, CM | en_US |
dc.contributor.author | LEE, CP | en_US |
dc.contributor.author | LIU, DC | en_US |
dc.date.accessioned | 2014-12-08T15:04:06Z | - |
dc.date.available | 2014-12-08T15:04:06Z | - |
dc.date.issued | 1994-02-28 | en_US |
dc.identifier.issn | 0003-6951 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1063/1.110843 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/2611 | - |
dc.description.abstract | We report a superlattice (SL) with multiple stacks of multiquantum barriers (MQB), which can reflect electrons more effectively than with a single stack of MQB. The reflectivities are calculated and compared with one another for a variety of potential barrier structures. The multistack SL has a wider energy spectrum within which electrons are reflected. Four types of n-GaAs/i-barrier/n-GaAs diodes were fabricated to confirm the calculated results. The current-voltage characteristics measured at 77 K for these diodes show that the turn-on voltage increases with the number of stacks of MQBs in the SL. This is in agreement with our calculated results. | en_US |
dc.language.iso | en_US | en_US |
dc.title | ENHANCEMENT OF ELECTRON-WAVE REFLECTION BY SUPERLATTICES WITH MULTIPLE STACKS OF MULTIQUANTUM BARRIERS | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1063/1.110843 | en_US |
dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
dc.citation.volume | 64 | en_US |
dc.citation.issue | 9 | en_US |
dc.citation.spage | 1108 | en_US |
dc.citation.epage | 1110 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
顯示於類別: | 期刊論文 |