Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Tang, Tsung-Ta | en_US |
dc.contributor.author | Li, Che-Hsuan | en_US |
dc.contributor.author | Pan, Ru-Pin | en_US |
dc.date.accessioned | 2014-12-08T15:38:06Z | - |
dc.date.available | 2014-12-08T15:38:06Z | - |
dc.date.issued | 2011 | en_US |
dc.identifier.issn | 1542-1406 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/26139 | - |
dc.identifier.uri | http://dx.doi.org/10.1080/15421406.2011.569282 | en_US |
dc.description.abstract | Anodic aluminum oxide (AAO) is a widely studied material with self-assembled nanochannel which is perpendicular to the substrate with nanometer-scale diameters and high aspect ratios. It is used for protecting the aluminum surface or as dielectric material. In this work, the alignment properties of liquid crystal on the etched AAO thin films were studied. By controlling the etching time, not only the pore sizes but also the thickness of the etched AAO thin films can be modified. Both homeotropic and homogenous alignment properties have been demonstrated on the etched AAO thin films with controlling etching time. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Anodic aluminum oxide | en_US |
dc.subject | liquid crystals | en_US |
dc.subject | vertical alignment | en_US |
dc.title | Alignment Properties of Liquid Crystal on Etched Anodic Aluminum Oxide Film | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1080/15421406.2011.569282 | en_US |
dc.identifier.journal | MOLECULAR CRYSTALS AND LIQUID CRYSTALS | en_US |
dc.citation.volume | 544 | en_US |
dc.citation.spage | 100 | en_US |
dc.citation.epage | 111 | en_US |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.identifier.wosnumber | WOS:000291859900011 | - |
dc.citation.woscount | 0 | - |
Appears in Collections: | Articles |
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