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dc.contributor.authorTang, Tsung-Taen_US
dc.contributor.authorLi, Che-Hsuanen_US
dc.contributor.authorPan, Ru-Pinen_US
dc.date.accessioned2014-12-08T15:38:06Z-
dc.date.available2014-12-08T15:38:06Z-
dc.date.issued2011en_US
dc.identifier.issn1542-1406en_US
dc.identifier.urihttp://hdl.handle.net/11536/26139-
dc.identifier.urihttp://dx.doi.org/10.1080/15421406.2011.569282en_US
dc.description.abstractAnodic aluminum oxide (AAO) is a widely studied material with self-assembled nanochannel which is perpendicular to the substrate with nanometer-scale diameters and high aspect ratios. It is used for protecting the aluminum surface or as dielectric material. In this work, the alignment properties of liquid crystal on the etched AAO thin films were studied. By controlling the etching time, not only the pore sizes but also the thickness of the etched AAO thin films can be modified. Both homeotropic and homogenous alignment properties have been demonstrated on the etched AAO thin films with controlling etching time.en_US
dc.language.isoen_USen_US
dc.subjectAnodic aluminum oxideen_US
dc.subjectliquid crystalsen_US
dc.subjectvertical alignmenten_US
dc.titleAlignment Properties of Liquid Crystal on Etched Anodic Aluminum Oxide Filmen_US
dc.typeArticleen_US
dc.identifier.doi10.1080/15421406.2011.569282en_US
dc.identifier.journalMOLECULAR CRYSTALS AND LIQUID CRYSTALSen_US
dc.citation.volume544en_US
dc.citation.spage100en_US
dc.citation.epage111en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000291859900011-
dc.citation.woscount0-
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