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dc.contributor.authorCheng, Hui-Wenen_US
dc.contributor.authorLi, Yimingen_US
dc.contributor.authorYang, Jung-Yenen_US
dc.date.accessioned2014-12-08T15:38:09Z-
dc.date.available2014-12-08T15:38:09Z-
dc.date.issued2011-01-01en_US
dc.identifier.issn0010-4655en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.cpc.2010.07.025en_US
dc.identifier.urihttp://hdl.handle.net/11536/26179-
dc.description.abstractIn this work we study surface enhanced Raman spectroscopy (SERS) active substrates for the detection of Rhodamine 6G To examine the electromagnetic enhancement we apply the finite-difference time-domain (FDTD) algorithm to analyze the structures by solving a set of coupled Maxwell's equations (Ampere s Law and Faraday s Law) in differential form The field enhancements are thus investigated in the visible regime with the wavelength of 633 nm In our experimental measurement the surface enhanced Raman scattering signals from the surface of substrates with 12-hour treatment and without treatment are performed and compared Through the three-dimensional (3D) FDTD calculation we find that the hydrothermally 12-hour treated samples possess significantly vertical variations of surface and thus have relatively larger field enhancement than those without treated Consequently it implies a strong positive effect on the surface enhancement which is consistent with the measured intensity (C) 2010 Elsevier B V All rights reserveden_US
dc.language.isoen_USen_US
dc.subjectSERS-active substrateen_US
dc.subjectField enhancementen_US
dc.subjectMaxwell s equationsen_US
dc.subjectNanoparticularen_US
dc.subjectFDTD simulationen_US
dc.subjectHydrothermal synthesisen_US
dc.titleInvestigation of Raman enhancement in hydrothermally roughened SERS-active substratesen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.cpc.2010.07.025en_US
dc.identifier.journalCOMPUTER PHYSICS COMMUNICATIONSen_US
dc.citation.volume182en_US
dc.citation.issue1en_US
dc.citation.spage260en_US
dc.citation.epage262en_US
dc.contributor.department電機工程學系zh_TW
dc.contributor.departmentDepartment of Electrical and Computer Engineeringen_US
dc.identifier.wosnumberWOS:000285119900081-
dc.citation.woscount0-
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