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dc.contributor.authorHung, Chung Jungen_US
dc.contributor.authorHung, Jeng Hanen_US
dc.contributor.authorLin, Pangen_US
dc.contributor.authorTseng, Tseung Yuenen_US
dc.date.accessioned2014-12-08T15:38:10Z-
dc.date.available2014-12-08T15:38:10Z-
dc.date.issued2011en_US
dc.identifier.issn0013-4651en_US
dc.identifier.urihttp://hdl.handle.net/11536/26184-
dc.identifier.urihttp://dx.doi.org/10.1149/1.3601862en_US
dc.description.abstractThis study reports the electrochemical performance and stability of MnO(x)-multiwall carbon nanotubes (MWCNTs) nanocomposite/Ni pseudocapacitor electrodes fabricated by a modified electrophoretic deposition (EPD) method. The nanocomposite electrode consisting of highly dispersed manganese oxide on MWCNTs was synthesized by a redox titration method at room temperature. The electrochemical properties of the electrode were demonstrated by cyclic voltammetry. The mean specific capacitances at a constant scan rate of 100 mV/s of MnO(x)-MWCNTs nanocomposites without and with heat treatment at temperatures 150, 200, and 250 degrees C for 2 h are 378, 402, 445, and 469 F/g, respectively, which indicate an increase with increasing annealing temperature. During stability tests, the as-grown MnO(x)-MWCNTs nanocomposite electrode can preserve 80% of its original capacitance after 6000 cycles of operation which can be increased to 86% after annealing at 200 degrees C for 2 h. The EPD MnO(x)/MWCNTs coaxial nanocomposite pseudocapacitors with manganese oxide ionized by H(+) ion process exhibit high specific capacitance, fast reaction rate, high stability, and have high potential for practical applications. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3601862] All rights reserved.en_US
dc.language.isoen_USen_US
dc.titleElectrophoretic Fabrication and Characterizations of Manganese Oxide/Carbon Nanotube Nanocomposite Pseudocapacitorsen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/1.3601862en_US
dc.identifier.journalJOURNAL OF THE ELECTROCHEMICAL SOCIETYen_US
dc.citation.volume158en_US
dc.citation.issue8en_US
dc.citation.spageA942en_US
dc.citation.epageA947en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000292154300013-
dc.citation.woscount11-
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