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dc.contributor.authorChen, Li-Yinen_US
dc.contributor.authorLai, Chun-Hanen_US
dc.contributor.authorWu, Pu-Weien_US
dc.contributor.authorFan, Shih-Kangen_US
dc.date.accessioned2014-12-08T15:38:10Z-
dc.date.available2014-12-08T15:38:10Z-
dc.date.issued2011en_US
dc.identifier.issn0013-4651en_US
dc.identifier.urihttp://hdl.handle.net/11536/26189-
dc.identifier.urihttp://dx.doi.org/10.1149/1.3594723en_US
dc.description.abstractZnO inverse opals are fabricated by electrophoresis of polystyrene (PS) microspheres (720 nm in diameter) on a ITO glass to form a close-packed colloidal crystal, followed by potentiostatic deposition of ZnO in the interstitial voids among the PS microspheres and chemical removal of the PS colloidal template. By adjusting the electrodeposition time, we obtain semi-layered and multi-layered ZnO inverse structures with significantly reduced defects and considerable surface uniformity. The semi-layered ZnO inverse opals display a bowl-like morphology with individual cavities isolated from each other. In contrast, the multi-layered ZnO inverse opals exhibit a three-dimensional skeleton with hexagonally-arranged cavities interconnected to each other. After surface coating of perfluorodecyltriethoxysilane, both samples reveal a superhydrophobic nature with contact angle larger than 150 degrees. In electrowetting measurements, the contact angles are decreasing with increasing applied voltages. The droplet on the semi-layered ZnO inverse opals demonstrates a notable transition from the Cassie-Baxter state to the Wenzel one. However, the droplet on the multi-layered ZnO inverse opals indicates three distinct regimes; Cassie-Baxter state, mixed Cassie-Baxter/Wenzel state, and Wenzel state. Repelling pressure of the entrapped air in the cavities is estimated to explain the observed contact angle variation upon the applied voltage for both samples. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3594723] All rights reserved.en_US
dc.language.isoen_USen_US
dc.titleElectrowetting of Superhydrophobic ZnO Inverse Opalsen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/1.3594723en_US
dc.identifier.journalJOURNAL OF THE ELECTROCHEMICAL SOCIETYen_US
dc.citation.volume158en_US
dc.citation.issue8en_US
dc.citation.spageP93en_US
dc.citation.epageP99en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000292154300101-
dc.citation.woscount5-
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