Millijoule-level Yb-doped photonic crystal fiber laser passively Q-switched with AlGaInAs quantum wells

doi:10.1364/OE.18.027910

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Zhuang, W. Z.	en_US
dc.contributor.author	Huang, W. C.	en_US
dc.contributor.author	Chiang, P. Y.	en_US
dc.contributor.author	Su, K. W.	en_US
dc.contributor.author	Huang, K. F.	en_US
dc.contributor.author	Chen, Y. F.	en_US
dc.date.accessioned	2014-12-08T15:38:15Z	-
dc.date.available	2014-12-08T15:38:15Z	-
dc.date.issued	2010-12-20	en_US
dc.identifier.issn	1094-4087	en_US
dc.identifier.uri	http://dx.doi.org/10.1364/OE.18.027910	en_US
dc.identifier.uri	http://hdl.handle.net/11536/26213	-
dc.description.abstract	We report on a millijoule-level Yb-doped photonic crystal fiber (PCF) laser passively Q-switched with AlGaInAs quantum wells (QWs). Three types of AlGaInAs devices with different QW numbers are fabricated to investigate the performance. With 50 groups of three AlGaInAs QWs as a saturable absorber (SA), the PCF laser generates an average power of 7.1 W with a pulse repetition rate of 6.5 kHz at a pump power of 16 W, corresponding to the pulse energy of 1.1 mJ. The maximum peak power is up to 110 kW. (C) 2010 Optical Society of America	en_US
dc.language.iso	en_US	en_US
dc.title	Millijoule-level Yb-doped photonic crystal fiber laser passively Q-switched with AlGaInAs quantum wells	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1364/OE.18.027910	en_US
dc.identifier.journal	OPTICS EXPRESS	en_US
dc.citation.volume	18	en_US
dc.citation.issue	26	en_US
dc.citation.spage	27910	en_US
dc.citation.epage	27915	en_US
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	Department of Electrophysics	en_US
dc.identifier.wosnumber	WOS:000285584200046	-
dc.citation.woscount	3	-
顯示於類別：	期刊論文

文件中的檔案：

000285584200046.pdf

若為 zip 檔案，請下載檔案解壓縮後，用瀏覽器開啟資料夾中的 index.html 瀏覽全文。