標題: Effect of substrate misorientation on the material properties of GaAs/Al(0.3)Ga(0.7)As tunnel diodes
作者: Yu, H. W.
Chang, E. Y.
Nguyen, H. Q.
Chang, J. T.
Chung, C. C.
Kuo, C. I.
Wong, Y. Y.
Wang, W. C.
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 6-Dec-2010
摘要: The effect of substrate misorientation on the material quality of the N(++)-GaAs/P(++)-AlGaAs tunnel diodes (TDs) grown on these substrates is investigated. It is found that the misorientation influences both surface roughness and interface properties of the N(++)-GaAs/P(++)-AlGaAs TDs. Smooth surface (rms roughness: 1.54 angstrom) and sharp interface for the GaAs/Al(0.3)Ga(0.7)As TDs were obtained when the (100) tilted 10 degrees off toward [111] GaAs substrate was used. Besides, the oxygen content in N(++)-GaAs and P(++)-AlGaAs layers grown on the 10 degrees off GaAs substrates was reduced due to the reduction of sticking coefficient and number of anisotropic sites. (C) 2010 American Institute of Physics. [doi:10.1063/1.3525158]
URI: http://dx.doi.org/10.1063/1.3525158
http://hdl.handle.net/11536/26241
ISSN: 0003-6951
DOI: 10.1063/1.3525158
期刊: APPLIED PHYSICS LETTERS
Volume: 97
Issue: 23
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