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dc.contributor.authorChantarat, N.en_US
dc.contributor.authorChen, Yu-Weien_US
dc.contributor.authorLin, Chin-Chingen_US
dc.contributor.authorChiang, Mei-Chingen_US
dc.contributor.authorChen, San-Yuanen_US
dc.date.accessioned2014-12-08T15:38:19Z-
dc.date.available2014-12-08T15:38:19Z-
dc.date.issued2010-12-06en_US
dc.identifier.issn0020-1669en_US
dc.identifier.urihttp://dx.doi.org/10.1021/ic1016214en_US
dc.identifier.urihttp://hdl.handle.net/11536/26242-
dc.description.abstractA novel ZnO-FTO heterostructure nanotube array was produced by combining a chemical solution process with oxygen-plasma etching. In this approach, presynthesized ZnO nanorod arrays act as templates, and FTO nanoparticles are deposited onto the ZnO nanorods by a simple spray pyrolysis method. X-ray photoelectron spectroscopy analysis demonstrated that the oxygen-plasma treatment decreased the O(2-)/OH(-) concentration ratio, resulting in dissociation of the Zn-O bonds and the outward diffusion of Zn cations to form an interior hollow, which is related to the formation of the hydroxyl functional group, Sn-OH, at the FTO surface. An etching evolution mechanism of the ZnO-FTO nanotubes via oxygen plasma was tentatively proposed in this study. Time-dependent photocurrent (I-T) measurements under ON-OFF cycles of UV illumination confirm that the 20-min etched sample exhibits a rectified photoresponse characteristic and a dark current increased by about 3 orders of magnitude over that of the unetched sample, which is attributed to the increased carrier concentration created at the surface conductive layer. This investigation offers an alternative selective etching method to lay the framework for nanoscale three-dimensional electrodes for solar-cell applications.en_US
dc.language.isoen_USen_US
dc.titleSelective Oxygen-Plasma-Etching Technique for the Formation of ZnO-FTO Heterostructure Nanotubes and Their Rectified Photocatalytic Propertiesen_US
dc.typeArticleen_US
dc.identifier.doi10.1021/ic1016214en_US
dc.identifier.journalINORGANIC CHEMISTRYen_US
dc.citation.volume49en_US
dc.citation.issue23en_US
dc.citation.spage11077en_US
dc.citation.epage11083en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000284518800043-
dc.citation.woscount4-
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