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dc.contributor.authorJian, Sheng-Ruien_US
dc.contributor.authorJuang, Jenh-Yihen_US
dc.contributor.authorChen, Nie-Chuanen_US
dc.contributor.authorJang, Jason S. -C.en_US
dc.contributor.authorHuang, J. C.en_US
dc.contributor.authorLai, Yi-Shaoen_US
dc.date.accessioned2014-12-08T15:38:20Z-
dc.date.available2014-12-08T15:38:20Z-
dc.date.issued2010-12-01en_US
dc.identifier.issn1941-4900en_US
dc.identifier.urihttp://dx.doi.org/10.1166/nnl.2010.1100en_US
dc.identifier.urihttp://hdl.handle.net/11536/26250-
dc.description.abstractThe mechanical responses of GaN/AIN multilayers grown on Si(111) substrates by using the metal-organic vapor phase epitaxy (MOVPE) were investigated by combining the Berkovich nanoindentation and the cross-sectional transmission electron microscopy (XTEM) techniques. The prominent mechanical parameters such as the hardness and Young's modulus of GaN/AIN multilayers were obtained to be 21.6 +/- 0.8 GPa and 285.7 +/- 12.1 GPa, respectively by operating the Berkovich nanoindenter with the continuous contact stiffness measurements (CSM) mode. The structural deformation behaviors were delineated by XTEM observations taken in the vicinity regions just underneath the indenter tip. It was revealed that the "pop-ins" observed in the load displacement curve during loading are due primarily to the activities of dislocation nucleation and propagation. There is no evidence of either phase transformation or micro-crack formation observed in XTEM images of GaN/AIN multilayers, which is consistent with no distinct "pop-out" event displayed in unloading curves.en_US
dc.language.isoen_USen_US
dc.subjectGaN/AIN Multilayersen_US
dc.subjectNanoindentationen_US
dc.subjectFocused Ion Beamen_US
dc.subjectCross-Sectional Transmission Electron Microscopyen_US
dc.titleNanoindentation-Induced Structural Deformation in GaN/AIN Multilayersen_US
dc.typeArticleen_US
dc.identifier.doi10.1166/nnl.2010.1100en_US
dc.identifier.journalNANOSCIENCE AND NANOTECHNOLOGY LETTERSen_US
dc.citation.volume2en_US
dc.citation.issue4en_US
dc.citation.spage315en_US
dc.citation.epage321en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000293211100009-
dc.citation.woscount19-
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