1. 目前位置：

完整後設資料紀錄
DC 欄位值語言
dc.contributor.authorChang, Kow-Mingen_US
dc.contributor.authorTzeng, Wen-Hsienen_US
dc.contributor.authorLiu, Kou-Chenen_US
dc.contributor.authorChan, Yi-Chunen_US
dc.contributor.authorKuo, Chun-Chihen_US
dc.date.accessioned2014-12-08T15:38:20Z-
dc.date.available2014-12-08T15:38:20Z-
dc.date.issued2010-12-01en_US
dc.identifier.issn0026-2714en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.microrel.2010.05.012en_US
dc.identifier.urihttp://hdl.handle.net/11536/26251-
dc.description.abstractEffect of ultraviolet (UV) light exposure on the resistive switching characteristics of a ITO/HfOx/TiN structure were investigated in this study. Samples exposed with and without ITO shield film exhibit distinct switching characteristics, including leakage current, I-V curves, set and reset voltage fluctuation. Based on random circuit network simulation by Liu et al., we suggest the distinction was attributed to the different filament shapes during forming process. Defects preexisted inside the HfOx film can cause large difference on the electrical properties. Therefore, the UV laser exposure is a critical issue on the electrical characteristics of RRAM devices. (C) Elsevier Ltd. All rights reserved.en_US
dc.language.isoen_USen_US
dc.titleInvestigation on the abnormal resistive switching induced by ultraviolet light exposure based on HfOx filmen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.microrel.2010.05.012en_US
dc.identifier.journalMICROELECTRONICS RELIABILITYen_US
dc.citation.volume50en_US
dc.citation.issue12en_US
dc.citation.spage1931en_US
dc.citation.epage1934en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000285667300005-
dc.citation.woscount3-
顯示於類別：期刊論文


文件中的檔案：

  1. 000285667300005.pdf

若為 zip 檔案，請下載檔案解壓縮後，用瀏覽器開啟資料夾中的 index.html 瀏覽全文。

相關內容
Loading...