統計資料
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| Improvement in RF performance of 40-nm InAs-channel based HEMTs using Pt gate sinking with two-step recess processes technology | 114 |
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| 六月 2024 | 七月 2024 | 八月 2024 | 九月 2024 | 十月 2024 | 十一月 2024 | 十二月 2024 | |
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| Improvement in RF performance of 40-nm InAs-channel based HEMTs using Pt gate sinking with two-step recess processes technology | 0 | 0 | 0 | 0 | 0 | 1 | 0 |
檔案下載
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| 000282206100032.pdf | 5 |
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