標題: | Impact of Surface Orientation on the Sensitivity of FinFETs to Process Variations-An Assessment Based on the Analytical Solution of the Schrodinger Equation |
作者: | Wu, Yu-Sheng Su, Pin 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | Fin-shaped field-effect transistor (FinFET);quantum effects;surface orientation;variation |
公開日期: | 1-十二月-2010 |
摘要: | This paper investigates the impact of surface orientation on V(th) sensitivity to process variations for Si and Ge fin-shaped field-effect transistors (FinFETs) using an analytical solution of the Schrodinger equation. Our theoretical model considers the parabolic potential well due to short-channel effects and, therefore, can be used to assess the quantum-confinement effect in short-channel FinFETs. Our study indicates that, for ultrascaled FinFETs, the importance of channel thickness (t(ch)) variations increases due to the quantum-confinement effect. The Si-(100) and Ge-(111) surfaces show lower V(th) sensitivity to the t(ch) variation as compared with other orientations. On the contrary, the quantum-confinement effect reduces the V(th) sensitivity to the L(eff) variation, and Si-(111) and Ge-(100) surfaces show lower V(th) sensitivity as compared with other orientations. Our study may provide insights for device design and circuit optimization using advanced FinFET technologies. |
URI: | http://dx.doi.org/10.1109/TED.2010.2080682 http://hdl.handle.net/11536/26298 |
ISSN: | 0018-9383 |
DOI: | 10.1109/TED.2010.2080682 |
期刊: | IEEE TRANSACTIONS ON ELECTRON DEVICES |
Volume: | 57 |
Issue: | 12 |
起始頁: | 3312 |
結束頁: | 3317 |
顯示於類別: | 期刊論文 |