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dc.contributor.authorChen, Shu-Hanen_US
dc.contributor.authorChang, Chao-Minen_US
dc.contributor.authorChiang, Pei-Yien_US
dc.contributor.authorWang, Sheng-Yuen_US
dc.contributor.authorChang, Wen-Haoen_US
dc.contributor.authorChyi, Jen-Innen_US
dc.date.accessioned2014-12-08T15:38:25Z-
dc.date.available2014-12-08T15:38:25Z-
dc.date.issued2010-12-01en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TED.2010.2072927en_US
dc.identifier.urihttp://hdl.handle.net/11536/26300-
dc.description.abstractDC electrical characteristics of a series of InAlAs/InGaAsSb/InGaAs double heterojunction bipolar transistors (DHBTs) that are grown on InP by molecular beam epitaxy are reported and analyzed. The InGaAsSb base of the transistors leads to a type-I base-emitter junction and a type-II base-collector junction, resulting in unique device characteristics, such as low turn-on voltage, low crossover current, and constant current gain over a wide current range. In addition, the DHBTs exhibit rather high current gains despite the use of a heavily doped thick InGaAsSb base layer. This indicates the long minority carrier lifetime of the InGaAsSb material. A high current gain over base sheet resistance ratio is, thus, realized with these novel DHBTs.en_US
dc.language.isoen_USen_US
dc.subjectHeterojunction bipolar transistors (HBTs)en_US
dc.subjectInAlAs/InGaAsSben_US
dc.subjecttype-II base-collector (B/C) junctionen_US
dc.titleDC Characteristics of InAlAs/InGaAsSb/InGaAs Double Heterojunction Bipolar Transistorsen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TED.2010.2072927en_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTRON DEVICESen_US
dc.citation.volume57en_US
dc.citation.issue12en_US
dc.citation.spage3327en_US
dc.citation.epage3332en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000284417700013-
dc.citation.woscount4-
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