Diode-pumped passively Q-switched picosecond Nd : GD(x)Y(1-x)VO(4) self-stimulated Raman laser

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DC Field	Value	Language
dc.contributor.author	Chen, YF	en_US
dc.contributor.author	Ku, ML	en_US
dc.contributor.author	Tsai, LY	en_US
dc.contributor.author	Chen, YC	en_US
dc.date.accessioned	2014-12-08T15:38:27Z	-
dc.date.available	2014-12-08T15:38:27Z	-
dc.date.issued	2004-10-01	en_US
dc.identifier.issn	0146-9592	en_US
dc.identifier.uri	http://dx.doi.org/10.1364/OL.29.002279	en_US
dc.identifier.uri	http://hdl.handle.net/11536/26337	-
dc.description.abstract	An efficiency of 8.2% is demonstrated for a diode-pumped passively Q-switched self-stimulated Raman laser with an a-cut mixed vanadate crystal, Nd:Gd0.8Y0.2VO4. At 2.2 W of incident pump power, the self-stimulated Raman laser produces pulses as short as 660 ps at a Stokes wavelength of 1175 nm with 2.7 muJ of energy per pulse at a 66-kHz repetition rate. (C) 2004 Optical Society of America.	en_US
dc.language.iso	en_US	en_US
dc.title	Diode-pumped passively Q-switched picosecond Nd : GD(x)Y(1-x)VO(4) self-stimulated Raman laser	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1364/OL.29.002279	en_US
dc.identifier.journal	OPTICS LETTERS	en_US
dc.citation.volume	29	en_US
dc.citation.issue	19	en_US
dc.citation.spage	2279	en_US
dc.citation.epage	2281	en_US
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	Department of Electrophysics	en_US
dc.identifier.wosnumber	WOS:000224193500023	-
dc.citation.woscount	58	-
Appears in Collections:	Articles