完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Li, YM | en_US |
dc.date.accessioned | 2014-12-08T15:38:31Z | - |
dc.date.available | 2014-12-08T15:38:31Z | - |
dc.date.issued | 2004-09-20 | en_US |
dc.identifier.issn | 0039-6028 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1016/j.susc.2004.06.052 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/26375 | - |
dc.description.abstract | We investigate the transition energy of vertically stacked semiconductor quantum dots with a complete three-dimensional (3D) model in an external magnetic field. In this study, the model formulation includes: (1) the position-dependent effective mass Hamiltonian in non-parabolic approximation for electrons, (2) the position-dependent effective mass Hamiltonian in parabolic approximation for holes, (3) the finite hard-wall confinement potential, and (4) the Ben Daniel-Duke boundary conditions. To solve the nonlinear problem, a nonlinear iterative method is implemented in our 3D nanostructure simulator. For multilayer small InAs/GaAs quantum dots, we find that the electron-hole transition energy is dominated by the number of stacked layers. The inter-distance d plays a crucial role in the tunable states of the quantum dots. Under zero magnetic field for a 10-layer QDs structure with d = 1.0 nm, there is about 30% variation in the electron ground state energy. Dependence of the magnetic field on the electron-hole transition energy is weakened when the number of stacked layers is increased. Our investigation is constructive in studying the magneto-optical phenomena and quantum optical structures. (C) 2004 Elsevier B.V. All rights reserved. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | computer simulations | en_US |
dc.subject | magnetic phenomena (cyclotron resonance | en_US |
dc.subject | phase transitions, etc.) | en_US |
dc.subject | quantum effects | en_US |
dc.subject | tunneling | en_US |
dc.subject | indium arsenide | en_US |
dc.subject | gallium arsenide | en_US |
dc.subject | heterojunctions | en_US |
dc.title | Vertical coupling effects and transition energies in multilayer InAs/GaAs quantum dots | en_US |
dc.type | Article; Proceedings Paper | en_US |
dc.identifier.doi | 10.1016/j.susc.2004.06.052 | en_US |
dc.identifier.journal | SURFACE SCIENCE | en_US |
dc.citation.volume | 566 | en_US |
dc.citation.issue | en_US | |
dc.citation.spage | 1057 | en_US |
dc.citation.epage | 1062 | en_US |
dc.contributor.department | 友訊交大聯合研發中心 | zh_TW |
dc.contributor.department | D Link NCTU Joint Res Ctr | en_US |
dc.identifier.wosnumber | WOS:000224238300071 | - |
顯示於類別: | 會議論文 |