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dc.contributor.authorLi, YMen_US
dc.date.accessioned2014-12-08T15:38:31Z-
dc.date.available2014-12-08T15:38:31Z-
dc.date.issued2004-09-20en_US
dc.identifier.issn0039-6028en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.susc.2004.06.052en_US
dc.identifier.urihttp://hdl.handle.net/11536/26375-
dc.description.abstractWe investigate the transition energy of vertically stacked semiconductor quantum dots with a complete three-dimensional (3D) model in an external magnetic field. In this study, the model formulation includes: (1) the position-dependent effective mass Hamiltonian in non-parabolic approximation for electrons, (2) the position-dependent effective mass Hamiltonian in parabolic approximation for holes, (3) the finite hard-wall confinement potential, and (4) the Ben Daniel-Duke boundary conditions. To solve the nonlinear problem, a nonlinear iterative method is implemented in our 3D nanostructure simulator. For multilayer small InAs/GaAs quantum dots, we find that the electron-hole transition energy is dominated by the number of stacked layers. The inter-distance d plays a crucial role in the tunable states of the quantum dots. Under zero magnetic field for a 10-layer QDs structure with d = 1.0 nm, there is about 30% variation in the electron ground state energy. Dependence of the magnetic field on the electron-hole transition energy is weakened when the number of stacked layers is increased. Our investigation is constructive in studying the magneto-optical phenomena and quantum optical structures. (C) 2004 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectcomputer simulationsen_US
dc.subjectmagnetic phenomena (cyclotron resonanceen_US
dc.subjectphase transitions, etc.)en_US
dc.subjectquantum effectsen_US
dc.subjecttunnelingen_US
dc.subjectindium arsenideen_US
dc.subjectgallium arsenideen_US
dc.subjectheterojunctionsen_US
dc.titleVertical coupling effects and transition energies in multilayer InAs/GaAs quantum dotsen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/j.susc.2004.06.052en_US
dc.identifier.journalSURFACE SCIENCEen_US
dc.citation.volume566en_US
dc.citation.issueen_US
dc.citation.spage1057en_US
dc.citation.epage1062en_US
dc.contributor.department友訊交大聯合研發中心zh_TW
dc.contributor.departmentD Link NCTU Joint Res Ctren_US
dc.identifier.wosnumberWOS:000224238300071-
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