完整後設資料紀錄
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dc.contributor.authorTsai, KYen_US
dc.contributor.authorChin, TSen_US
dc.contributor.authorShieh, HPDen_US
dc.date.accessioned2014-12-08T15:38:34Z-
dc.date.available2014-12-08T15:38:34Z-
dc.date.issued2004-09-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.43.6268en_US
dc.identifier.urihttp://hdl.handle.net/11536/26395-
dc.description.abstractGrain curvature effect on the measurement of nano-indentation has been observed for the first time, taking VO2 thin film as an example. As the grain size of thin film is comparable to the diameter of indenter tip, the maximum penetration depths under the same maximum load (P-max) vary and lead to deviations in estimated hardness and Young's modulus. Under the same Pmax, larger penetration depth leads to a larger projected area, and a decrease in hardness. The large deviation of stiffness, affected by surface roughness under low Pmax, produces fluctuation of Young's modulus. Increase in penetration depth diminishes the roughness effect so that deviations in penetration depths dominate the variations in Young's modulus. The hardness and Young's modulus curves measured at lowest penetration depth, being thought to be free from effect of grain curvature, coincide very well to the curves measured by continuous stiffness measurements mode.en_US
dc.language.isoen_USen_US
dc.subjectnano-indentationen_US
dc.subjecthardness of thin filmen_US
dc.subjectYoung's modulus of thin filmen_US
dc.subjectVO2en_US
dc.subjectvanadium dioxideen_US
dc.subjectgrain curvature effecten_US
dc.titleEffect of grain curvature on nano-indentation measurements of thin filmsen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.43.6268en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERSen_US
dc.citation.volume43en_US
dc.citation.issue9Aen_US
dc.citation.spage6268en_US
dc.citation.epage6273en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000224579000070-
dc.citation.woscount22-
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