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dc.contributor.authorTWARDOWSKI, Aen_US
dc.contributor.authorCHERNYU, Ken_US
dc.contributor.authorCHEN, FRen_US
dc.contributor.authorKUO, SSen_US
dc.contributor.authorRO, CSen_US
dc.contributor.authorCHIU, KCen_US
dc.contributor.authorCHOU, WCen_US
dc.contributor.authorYANG, SLen_US
dc.contributor.authorCHUU, DSen_US
dc.contributor.authorCHEN, YFen_US
dc.date.accessioned2014-12-08T15:04:08Z-
dc.date.available2014-12-08T15:04:08Z-
dc.date.issued1994-02-01en_US
dc.identifier.issn0370-1972en_US
dc.identifier.urihttp://dx.doi.org/10.1002/pssb.2221810219en_US
dc.identifier.urihttp://hdl.handle.net/11536/2640-
dc.description.abstractThe valence band crystal field and spin-orbit splitting in hexagonal diluted magnetic semiconductors based on CdSe and CdS is studied. It is found that the crystal field splitting is practically magnetic ion independent for CdSe based crystals, whereas in the case of CdS based samples a strong influence of magnetic ion substitution on crystal field splitting is observed.en_US
dc.language.isoen_USen_US
dc.titleVALENCE-BAND CRYSTAL-FIELD SPLITTING OF HEXAGONAL DILUTED MAGNETIC SEMICONDUCTORSen_US
dc.typeArticleen_US
dc.identifier.doi10.1002/pssb.2221810219en_US
dc.identifier.journalPHYSICA STATUS SOLIDI B-BASIC RESEARCHen_US
dc.citation.volume181en_US
dc.citation.issue2en_US
dc.citation.spage439en_US
dc.citation.epage445en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:A1994MZ06800018-
dc.citation.woscount2-
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