Chemical vapor deposition of the hafnium oxynitride for use as HIGH-K materials in microelectronic devices.

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Chuang, SH	en_US
dc.contributor.author	Chou, YH	en_US
dc.contributor.author	Chiu, HT	en_US
dc.date.accessioned	2014-12-08T15:38:40Z	-
dc.date.available	2014-12-08T15:38:40Z	-
dc.date.issued	2004-08-22	en_US
dc.identifier.issn	0065-7727	en_US
dc.identifier.uri	http://hdl.handle.net/11536/26460	-
dc.language.iso	en_US	en_US
dc.title	Chemical vapor deposition of the hafnium oxynitride for use as HIGH-K materials in microelectronic devices.	en_US
dc.type	Meeting Abstract	en_US
dc.identifier.journal	ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY	en_US
dc.citation.volume	228	en_US
dc.citation.issue		en_US
dc.citation.spage	U887	en_US
dc.citation.epage	U887	en_US
dc.contributor.department	應用化學系	zh_TW
dc.contributor.department	Department of Applied Chemistry	en_US
dc.identifier.wosnumber	WOS:000223712803739	-
顯示於類別：	會議論文