High-power diode-pumped actively Q-switched Nd : YVO4 self-Raman laser: influence of dopant concentration

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DC 欄位	值	語言
dc.contributor.author	Chen, YF	en_US
dc.date.accessioned	2014-12-08T15:38:41Z	-
dc.date.available	2014-12-08T15:38:41Z	-
dc.date.issued	2004-08-15	en_US
dc.identifier.issn	0146-9592	en_US
dc.identifier.uri	http://dx.doi.org/10.1364/OL.29.001915	en_US
dc.identifier.uri	http://hdl.handle.net/11536/26473	-
dc.description.abstract	Efficient self-Raman frequency conversion from a diode-pumped actively Q-switched Nd:YVO4 laser at 1064 nm to Stokes emission. at 1176 nm is achieved for the first time to the author's knowledge. With a 0.2-at. % Nd:YVO4 crystal, greater than 1.5 W of power at a wavelength of 1176 nm at a repetition rate of 20 kHz was generated with a diode pump power of 10.8 W, corresponding to 4 conversion of 13.9%. Pulse width and peak power were 18 ns and 4.2 kW, respectively. (C) 2004 Optical Society of America.	en_US
dc.language.iso	en_US	en_US
dc.title	High-power diode-pumped actively Q-switched Nd : YVO4 self-Raman laser: influence of dopant concentration	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1364/OL.29.001915	en_US
dc.identifier.journal	OPTICS LETTERS	en_US
dc.citation.volume	29	en_US
dc.citation.issue	16	en_US
dc.citation.spage	1915	en_US
dc.citation.epage	1917	en_US
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	Department of Electrophysics	en_US
dc.identifier.wosnumber	WOS:000223074600027	-
dc.citation.woscount	86	-
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