標題: Computer simulation of multifinger heterojunction bipolar transistor with self-heating and thermal coupling models
作者: Huang, KY
Li, YM
Lee, CP
電子工程學系及電子研究所
友訊交大聯合研發中心
Department of Electronics Engineering and Institute of Electronics
D Link NCTU Joint Res Ctr
關鍵字: nonlinearity;self-heating;intermodulation;distortion;multifinger;OIP3;IIP3;power transistor;thermal;HBT model;simulation
公開日期: 1-八月-2004
摘要: In this paper, we simulate the nonlinearity of a multifinger heterojunction bipolar transistor (HBT) operated at radio frequency (RF). We directly solve the nonlinear differential equations of the HBT large-signal model with the electrical-thermal feedback equations in time domain using the waveform relaxation (WR) and monotone iterative (MI) methods. The temperature dependence of energy band gap (E-g), current gain, saturation current and thermal conductivity are also taken into consideration. With the developed simulator, the power-added efficiency (PAE), 1-dB compression point (P1-dB) and output third-order intercept point (OIP3) of a three-finger HBT are calculated. Our results illustrate the effects of self-heating and thermal coupling among different fingers play important roles in the nonlinearity of the multifinger power transistors. Furthermore, the proposed method allows us to evaluate the thermal effects on linearity of the multifinger power transistors and perform optimum design for these devices. (C) 2004 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.mee.2004.03.083
http://hdl.handle.net/11536/26495
ISSN: 0167-9317
DOI: 10.1016/j.mee.2004.03.083
期刊: MICROELECTRONIC ENGINEERING
Volume: 75
Issue: 2
起始頁: 137
結束頁: 144
顯示於類別:期刊論文


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