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dc.contributor.authorChung, SWen_US
dc.contributor.authorTang, CSen_US
dc.contributor.authorChu, CSen_US
dc.contributor.authorChang, CYen_US
dc.date.accessioned2019-04-03T06:37:40Z-
dc.date.available2019-04-03T06:37:40Z-
dc.date.issued2004-08-01en_US
dc.identifier.issn2469-9950en_US
dc.identifier.urihttp://dx.doi.org/10.1103/PhysRevB.70.085315en_US
dc.identifier.urihttp://hdl.handle.net/11536/26496-
dc.description.abstractWe study the pumping effects, in both the adiabatic and nonadiabatic regimes, of a pair of finite finger-gate array (FGA) on a narrow channel. Connection between the pumping characteristics and associated mechanisms is established. The pumping potential is generated by ac biasing the FGA pair. For a single pair (N=1) of finger gates (FG's), the pumping mechanism is due to the coherent inelastic scattering of the traversing electron to its subband threshold. For a pair of FGA with pair number N>2, the dominant pumping mechanism becomes that of the time-dependent Bragg reflection. The contribution of the time-dependent Bragg reflection to the pumping is enabled by breaking the symmetry in the electron transmission when the pumping potential is of a predominant propagating type. This propagating wave condition can be achieved both by an appropriate choice of the FGA pair configuration and by the monitoring of a phase difference phi between the ac biases in the FGA pair. The robustness of such a pumping mechanism is demonstrated by considering a FGA pair with only pair number N=4.en_US
dc.language.isoen_USen_US
dc.titleFinger-gate array quantum pumps: Pumping characteristics and mechanismsen_US
dc.typeArticleen_US
dc.identifier.doi10.1103/PhysRevB.70.085315en_US
dc.identifier.journalPHYSICAL REVIEW Ben_US
dc.citation.volume70en_US
dc.citation.issue8en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department電機學院zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentCollege of Electrical and Computer Engineeringen_US
dc.identifier.wosnumberWOS:000223716700067en_US
dc.citation.woscount16en_US
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