統計資料
總造訪次數
| 檢視 | |
|---|---|
| Highly reliable GaN-based light-emitting diodes formed by p-In0.1Ga0.9N-ITO structure | 104 |
本月總瀏覽
檔案下載
| 檢視 | |
|---|---|
| 000222884300005.pdf | 22 |
國家瀏覽排行
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|---|---|
| 中國 | 95 |
| 美國 | 8 |
| 俄羅斯聯邦 | 1 |
縣市瀏覽排行
| 檢視 | |
|---|---|
| Shenzhen | 95 |
| Menlo Park | 4 |
| Kensington | 2 |
| Edmond | 1 |
| Kirksville | 1 |
| 檢視 | |
|---|---|
| Highly reliable GaN-based light-emitting diodes formed by p-In0.1Ga0.9N-ITO structure | 104 |
| 檢視 | |
|---|---|
| 000222884300005.pdf | 22 |
| 檢視 | |
|---|---|
| 中國 | 95 |
| 美國 | 8 |
| 俄羅斯聯邦 | 1 |
| 檢視 | |
|---|---|
| Shenzhen | 95 |
| Menlo Park | 4 |
| Kensington | 2 |
| Edmond | 1 |
| Kirksville | 1 |