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dc.contributor.authorLin, GRen_US
dc.contributor.authorLiao, YSen_US
dc.contributor.authorWu, JRen_US
dc.date.accessioned2014-12-08T15:38:46Z-
dc.date.available2014-12-08T15:38:46Z-
dc.date.issued2004-08-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.43.5204en_US
dc.identifier.urihttp://hdl.handle.net/11536/26540-
dc.description.abstractThe harmonic injection-locking dynamics of a gain-switched laser diode (GSLD) pulse-injection-locked Erbium-doped fiber amplifier-based laser (EDFL) are studied. Under GSLD injection with a pulsewidth and an average power of 17.6ps and 0.2 mW, respectively, at a repetition frequency corresponding to the 223rd harmonic (996.8635971 MHz) of the EDFL, the pulsewidth, peak power, and phase noise of the injection-locked EDFL are broadening from 34.3 ps to 130 ps, decreasing from 1.8 W to 500 mW, and increasing from - 101.5 dBc/Hz to -86 dBc/Hz, respectively, as the repetition frequency detunes toward the injection-locking margin. The injection-locking range is from -13 kHz to +27 kHz. The peak power of the broadened pulses is greatly reduced to one third of that at the zero-detuning condition even with a detuning frequency of 5 kHz. The injection-locked EDFL pulse-train eventually disappears as the repetition frequency of the GSLD detuned beyond the injection-locking bandwidth. The timing jitter of the GSLD harmonic injection-locked EDFL remains unchanged (<0.5ps) within a positive detuning frequency of <25kHz, which is less stable at a negatively frequency-detuned regime.en_US
dc.language.isoen_USen_US
dc.subjecterbium-doped fiber laseren_US
dc.subjectharmonic injection-lockeden_US
dc.subjectgain-switched laser diodeen_US
dc.subjectdetuning frequencyen_US
dc.titleHarmonic injection-locking behavior of frequency-detuned optical pulse in erbium-doped fiber laseren_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.43.5204en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERSen_US
dc.citation.volume43en_US
dc.citation.issue8Aen_US
dc.citation.spage5204en_US
dc.citation.epage5208en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000224841400020-
dc.citation.woscount1-
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