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dc.contributor.authorLai, FIen_US
dc.contributor.authorHsueh, THen_US
dc.contributor.authorChang, YHen_US
dc.contributor.authorKuo, HCen_US
dc.contributor.authorWang, SCen_US
dc.contributor.authorLaih, LHen_US
dc.contributor.authorSong, CPen_US
dc.contributor.authorYang, HPen_US
dc.date.accessioned2014-12-08T15:38:47Z-
dc.date.available2014-12-08T15:38:47Z-
dc.date.issued2004-08-01en_US
dc.identifier.issn0268-1242en_US
dc.identifier.urihttp://dx.doi.org/10.1088/0268-1242/19/8/L02en_US
dc.identifier.urihttp://hdl.handle.net/11536/26550-
dc.description.abstractHigh-speed single transverse mode 850 nm vertical cavity surface emitting lasers (VCSELs) with large emission aperture with a diameter of 8 Am were fabricated. These VCSELs exhibit good performance with threshold currents of 1.5 mA, a single transverse mode emission within the full operational range and a maximum output power of 3.8 mW. The large aperture is advantageous to these VCSELs with a smaller dynamic resistance (60 Omega) than that of conventional single-mode VCSEL. These single-mode VCSELs also demonstrate superior high-speed performance up to 10 Gb s(-1).en_US
dc.language.isoen_USen_US
dc.title10 Gb/s single-mode vertical-cavity surface-emitting laser with large aperture and oxygen implantationen_US
dc.typeArticleen_US
dc.identifier.doi10.1088/0268-1242/19/8/L02en_US
dc.identifier.journalSEMICONDUCTOR SCIENCE AND TECHNOLOGYen_US
dc.citation.volume19en_US
dc.citation.issue8en_US
dc.citation.spageL86en_US
dc.citation.epageL89en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000224975600002-
dc.citation.woscount2-
Appears in Collections:Articles


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