完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Lai, FI | en_US |
dc.contributor.author | Hsueh, TH | en_US |
dc.contributor.author | Chang, YH | en_US |
dc.contributor.author | Kuo, HC | en_US |
dc.contributor.author | Wang, SC | en_US |
dc.contributor.author | Laih, LH | en_US |
dc.contributor.author | Song, CP | en_US |
dc.contributor.author | Yang, HP | en_US |
dc.date.accessioned | 2014-12-08T15:38:47Z | - |
dc.date.available | 2014-12-08T15:38:47Z | - |
dc.date.issued | 2004-08-01 | en_US |
dc.identifier.issn | 0268-1242 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1088/0268-1242/19/8/L02 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/26550 | - |
dc.description.abstract | High-speed single transverse mode 850 nm vertical cavity surface emitting lasers (VCSELs) with large emission aperture with a diameter of 8 Am were fabricated. These VCSELs exhibit good performance with threshold currents of 1.5 mA, a single transverse mode emission within the full operational range and a maximum output power of 3.8 mW. The large aperture is advantageous to these VCSELs with a smaller dynamic resistance (60 Omega) than that of conventional single-mode VCSEL. These single-mode VCSELs also demonstrate superior high-speed performance up to 10 Gb s(-1). | en_US |
dc.language.iso | en_US | en_US |
dc.title | 10 Gb/s single-mode vertical-cavity surface-emitting laser with large aperture and oxygen implantation | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1088/0268-1242/19/8/L02 | en_US |
dc.identifier.journal | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | en_US |
dc.citation.volume | 19 | en_US |
dc.citation.issue | 8 | en_US |
dc.citation.spage | L86 | en_US |
dc.citation.epage | L89 | en_US |
dc.contributor.department | 光電工程學系 | zh_TW |
dc.contributor.department | Department of Photonics | en_US |
dc.identifier.wosnumber | WOS:000224975600002 | - |
dc.citation.woscount | 2 | - |
顯示於類別: | 期刊論文 |