1. 目前位置：

完整後設資料紀錄
DC 欄位值語言
dc.contributor.authorChang, HCen_US
dc.contributor.authorLee, CSen_US
dc.contributor.authorChen, SHen_US
dc.contributor.authorChang, EYen_US
dc.contributor.authorHe, Jen_US
dc.date.accessioned2014-12-08T15:38:51Z-
dc.date.available2014-12-08T15:38:51Z-
dc.date.issued2004-07-01en_US
dc.identifier.issn0361-5235en_US
dc.identifier.urihttp://dx.doi.org/10.1007/s11664-004-0251-2en_US
dc.identifier.urihttp://hdl.handle.net/11536/26608-
dc.description.abstractSchottky structures with copper and refractory metals as diffusion barrier for GaAs Schottky diodes were evaluated. These structures have lower series resistances than the conventionally used Ti/Pt/Au structure. Based on the electrical and material characteristics, the Ti/W/Cu and Ti/Mo/Cu Schottky structures are thermally stable up to 400degreesC; the Ti/Co/Cu Schottky structure is thermally stable up to 300degreesC. Overall, the copper-metallized Schottky structures have excellent electrical characteristics and thermal stability, and can be used as the Schottky metals for GaAs devices.en_US
dc.language.isoen_USen_US
dc.subjectSchottkyen_US
dc.subjectdiffusion barrieren_US
dc.subjectGaAsen_US
dc.titleStudy of Ti/W/Cu, Ti/Co/Cu, and Ti/Mo/Cu multilayer structures as Schottky metals for GaAs diodesen_US
dc.typeLetteren_US
dc.identifier.doi10.1007/s11664-004-0251-2en_US
dc.identifier.journalJOURNAL OF ELECTRONIC MATERIALSen_US
dc.citation.volume33en_US
dc.citation.issue7en_US
dc.citation.spageL15en_US
dc.citation.epageL17en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department友訊交大聯合研發中心zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentD Link NCTU Joint Res Ctren_US
dc.identifier.wosnumberWOS:000222735000014-
dc.citation.woscount1-
顯示於類別：期刊論文


文件中的檔案：

  1. 000222735000014.pdf

若為 zip 檔案，請下載檔案解壓縮後，用瀏覽器開啟資料夾中的 index.html 瀏覽全文。

相關內容
Loading...