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dc.contributor.authorChen, Shi-Wenen_US
dc.contributor.authorChang, Ming-Hungen_US
dc.contributor.authorHsieh, Wei-Chihen_US
dc.contributor.authorHwang, Weien_US
dc.date.accessioned2014-12-08T15:38:51Z-
dc.date.available2014-12-08T15:38:51Z-
dc.date.issued2010en_US
dc.identifier.isbn978-1-4244-5309-2en_US
dc.identifier.issn0271-4302en_US
dc.identifier.urihttp://hdl.handle.net/11536/26609-
dc.description.abstractA process, voltage, and temperature (PVT) sensor without a voltage/current analog-to-digital converter (ADC) or bandgap reference is proposed for high accuracy, low power, and wide voltage range portable applications. Conventional temperature sensors rely on voltage/current ADC for digital output code conversion. The proposed temperature sensor generates a clock frequency proportional to the measured temperature, and converts the frequency into a corresponding digital code. The generated digital code is still under the influence of PVT variations. Two distinct sensors for voltage and process monitoring are also proposed to enhance temperature sensor environmental variation immunity. The property of zero temperature coefficient (ZTC) bias point is used to remove temperature effect. The proposed wide voltage range low power PVT sensor is designed in UMC 65nm bulk CMOS technology. It is capable of operating over a wide voltage range within 0.3V similar to V. The power consumption is no more than 3.7 mu W at 0.3V supply voltage and a high sample rate of 10k samples/sec. The temperature error is merely -0.8 similar to 0.8 degrees C.en_US
dc.language.isoen_USen_US
dc.titleFully On-Chip Temperature, Process, and Voltage Sensorsen_US
dc.typeArticleen_US
dc.identifier.journal2010 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMSen_US
dc.citation.spage897en_US
dc.citation.epage900en_US
dc.contributor.department電子與資訊研究中心zh_TW
dc.contributor.departmentMicroelectronics and Information Systems Research Centeren_US
dc.identifier.wosnumberWOS:000287216001035-
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