統計資料
總造訪次數
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| Investigation of a 450 V rating silicon-on-insulator lateral-double-diffused-metal-oxide-semiconductor fabrication by 12/25/5/40 V bipolar-complementary metal-oxide-semiconductor double-diffused metal-oxide-semiconductor process on bulk silicon substrate | 100 |
本月總瀏覽
檔案下載
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| 000223001800012.pdf | 3 |
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| 中國 | 95 |
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| Shenzhen | 94 |
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