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dc.contributor.authorCheng, YLen_US
dc.contributor.authorWang, YLen_US
dc.contributor.authorLan, JKen_US
dc.contributor.authorWu, SAen_US
dc.contributor.authorChang, SCen_US
dc.contributor.authorLo, KYen_US
dc.contributor.authorFeng, MSen_US
dc.date.accessioned2014-12-08T15:38:56Z-
dc.date.available2014-12-08T15:38:56Z-
dc.date.issued2004-07-01en_US
dc.identifier.issn1071-1023en_US
dc.identifier.urihttp://dx.doi.org/10.1116/1.1767107en_US
dc.identifier.urihttp://hdl.handle.net/11536/26653-
dc.description.abstractIntegration issues of metal line delamination from fluorinated silica glass (FSG) in deep submicron intermetal dielectric applications were investigated in this study. A metal line peeled off after a nonoptimized in situ deposition of undoped-silicon-glass (USG; SiO2) capping layer followed the post-FSG-chemical mechanical polishing N-2 treatment. It was found that higher bias power and longer process time of N-2 treatment led to more active fluorine species diffusing from the FSG films to the USG surface, which might react with subsequent Ti/TiN/W metal layer and result in metal delamination. Using plasma-enhanced N-2 treatment and ex situ USG capping with lower initial deposition temperature by extra cooling step, the stability of the FSG films was improved and resulted in a robust structure without metal peeling. (C) 2004 American Vacuum Society.en_US
dc.language.isoen_USen_US
dc.titleOptimization of post-N-2 treatment and undoped-Si-glass cap to improve metal wring delamination in deep submicron high-density plasma-fluorinated silica glass intermetal dielectric applicationen_US
dc.typeArticleen_US
dc.identifier.doi10.1116/1.1767107en_US
dc.identifier.journalJOURNAL OF VACUUM SCIENCE & TECHNOLOGY Ben_US
dc.citation.volume22en_US
dc.citation.issue4en_US
dc.citation.spage1792en_US
dc.citation.epage1796en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000223925300031-
dc.citation.woscount1-
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