Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Cheng, YL | en_US |
dc.contributor.author | Wang, YL | en_US |
dc.contributor.author | Lan, JK | en_US |
dc.contributor.author | Wu, SA | en_US |
dc.contributor.author | Chang, SC | en_US |
dc.contributor.author | Lo, KY | en_US |
dc.contributor.author | Feng, MS | en_US |
dc.date.accessioned | 2014-12-08T15:38:56Z | - |
dc.date.available | 2014-12-08T15:38:56Z | - |
dc.date.issued | 2004-07-01 | en_US |
dc.identifier.issn | 1071-1023 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1116/1.1767107 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/26653 | - |
dc.description.abstract | Integration issues of metal line delamination from fluorinated silica glass (FSG) in deep submicron intermetal dielectric applications were investigated in this study. A metal line peeled off after a nonoptimized in situ deposition of undoped-silicon-glass (USG; SiO2) capping layer followed the post-FSG-chemical mechanical polishing N-2 treatment. It was found that higher bias power and longer process time of N-2 treatment led to more active fluorine species diffusing from the FSG films to the USG surface, which might react with subsequent Ti/TiN/W metal layer and result in metal delamination. Using plasma-enhanced N-2 treatment and ex situ USG capping with lower initial deposition temperature by extra cooling step, the stability of the FSG films was improved and resulted in a robust structure without metal peeling. (C) 2004 American Vacuum Society. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Optimization of post-N-2 treatment and undoped-Si-glass cap to improve metal wring delamination in deep submicron high-density plasma-fluorinated silica glass intermetal dielectric application | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1116/1.1767107 | en_US |
dc.identifier.journal | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | en_US |
dc.citation.volume | 22 | en_US |
dc.citation.issue | 4 | en_US |
dc.citation.spage | 1792 | en_US |
dc.citation.epage | 1796 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.identifier.wosnumber | WOS:000223925300031 | - |
dc.citation.woscount | 1 | - |
Appears in Collections: | Articles |
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