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dc.contributor.authorChang, LCen_US
dc.contributor.authorChiou, BSen_US
dc.date.accessioned2014-12-08T15:38:56Z-
dc.date.available2014-12-08T15:38:56Z-
dc.date.issued2004-07-01en_US
dc.identifier.issn1385-3449en_US
dc.identifier.urihttp://dx.doi.org/10.1007/s10832-004-5200-1en_US
dc.identifier.urihttp://hdl.handle.net/11536/26656-
dc.description.abstractBa(Nd0.8Sm0.2)(2)Ti4O12 ceramics prepared by conventional solid-state sintering have a dielectric constant of about 80 and a nearly zero temperature coefficient of resonant frequency; however, the sintering temperature is above 1350degreesC. Doping with B2O3 (up to 5 wt%) promotes the densification and dielectric properties of BNST ceramics. It is found that coating BNST powder with thin B2O3 layer of about 180 nm reduces the sintering temperature to below 1020degreesC. The effects of B2O3 nano-coating on the dielectric microwave properties and the microstructures of BNST ceramics are investigated. Ninety-six percent of theoretical densities is obtained for specimens coated with 2 wt% B2O3 sintered at 960degreesC and the samples exhibit significant (002) preferred orientation and columnar structure.en_US
dc.language.isoen_USen_US
dc.subjectoxideen_US
dc.subjectmicrowave dielectric propertiesen_US
dc.subjectceramicsen_US
dc.subjectliquid phase sinteringen_US
dc.titleEffect of B2O3 nano-coating on the sintering behaviors and electrical microwave properties of Ba(Nd2-xSmx)Ti4O12 ceramicsen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1007/s10832-004-5200-1en_US
dc.identifier.journalJOURNAL OF ELECTROCERAMICSen_US
dc.citation.volume13en_US
dc.citation.issue1-3en_US
dc.citation.spage829en_US
dc.citation.epage837en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000226236100133-
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