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dc.contributor.authorLiu, TAen_US
dc.contributor.authorTani, Men_US
dc.contributor.authorNakajima, Men_US
dc.contributor.authorHangyo, Men_US
dc.contributor.authorSakai, Ken_US
dc.contributor.authorNakashima, Sen_US
dc.contributor.authorPan, CLen_US
dc.date.accessioned2014-12-08T15:38:56Z-
dc.date.available2014-12-08T15:38:56Z-
dc.date.issued2004-06-28en_US
dc.identifier.issn1094-4087en_US
dc.identifier.urihttp://dx.doi.org/10.1364/OPEX.12.002954en_US
dc.identifier.urihttp://hdl.handle.net/11536/26659-
dc.description.abstractPhotoconductive ( PC) antennas fabricated on InP bombarded with 180 keV protons of different dosages (InP:H+) all exhibit a useful bandwidth of about 30 THz, comparable to that of the LT-GaAs PC antenna. The peak signal current of the best InP: H+ device (dosage of 10(15) ions/cm(2)) is slightly higher than that of the LT-GaAs one, while the signal-to-noise ratio (SNR) of the former is about half of that of the latter due to lower resistivity. This suggests that InP: H+ can be a good substrate for THz PC antennas with proper annealing and/or implantation recipe. (C) 2004 Optical Society of America.en_US
dc.language.isoen_USen_US
dc.titleUltrabroadband terahertz field detection by proton-bombarded InP photoconductive antennasen_US
dc.typeArticleen_US
dc.identifier.doi10.1364/OPEX.12.002954en_US
dc.identifier.journalOPTICS EXPRESSen_US
dc.citation.volume12en_US
dc.citation.issue13en_US
dc.citation.spage2954en_US
dc.citation.epage2959en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000222321200019-
dc.citation.woscount22-
Appears in Collections:Articles


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