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dc.contributor.authorLin, GRen_US
dc.contributor.authorLin, CJen_US
dc.date.accessioned2014-12-08T15:38:57Z-
dc.date.available2014-12-08T15:38:57Z-
dc.date.issued2004-06-15en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.1739283en_US
dc.identifier.urihttp://hdl.handle.net/11536/26664-
dc.description.abstractThe defect-enhanced blue-green photoluminescence (PL) and electroluminescence (EL) of a metal-oxide-semiconductor (MOS) diode made on 500-nm-thick Si-ion-implanted SiO2 (SiO2:Si+) on Si substrate are demonstrated. A multienergy/multidose implantation and 1100 degreesC annealing process is employed to enhance the 415-455 nm PL contributed by weak oxygen bond and neutral oxygen vacancy defects. The Ag/SiO2:Si+/n-Si/Ag MOS diode exhibits a negative-differential resistance effect with threshold field strength of 300 kV/cm. The threshold pulsed current of deep-blue EL from Ag/SiO2:Si+/n-Si/Ag diode is 280 mA (or 3 V), which turns to white-light emission at saturation current of 680 mA and further shifts to green as the biased current increases up to 3 A. The 3 dB power decay within 3 h is also observed. (C) 2004 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleImproved blue-green electroluminescence of metal-oxide-semiconductor diode fabricated on multirecipe Si-implanted and annealed SiO2/Si substrateen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.1739283en_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume95en_US
dc.citation.issue12en_US
dc.citation.spage8484en_US
dc.citation.epage8486en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000221843400143-
dc.citation.woscount28-
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