完整後設資料紀錄
DC 欄位語言
dc.contributor.authorYang, THen_US
dc.contributor.authorYang, CSen_US
dc.contributor.authorLuo, GLen_US
dc.contributor.authorChou, WCen_US
dc.contributor.authorYang, TYen_US
dc.contributor.authorChang, EYen_US
dc.contributor.authorChang, CYen_US
dc.date.accessioned2014-12-08T15:38:57Z-
dc.date.available2014-12-08T15:38:57Z-
dc.date.issued2004-06-15en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.43.L811en_US
dc.identifier.urihttp://hdl.handle.net/11536/26671-
dc.description.abstractThe epitaxial growth of ZnSe layers on Si substrates utilizing a Ge/Ge0.95Si0.0.5/Ge0.9Si0.1 buffer structure is demonstrated. In this study, we examine the structure, optical characteristics and atomic interdiffusion of the ZnSe epilayer grown on Si. In a sample with a 2degrees off-cut Si substrate, the outdiffusion of Ge into the ZnSe epilayer is suppressed. The low-temperature PL measurements indicate that the sample with a 2degrees off-cut Si substrate improves its optical characteristic effectively. The X-ray diffraction analysis and transmission electron microscopy (TEM) results indicate that the use of a 2degrees off-cut Ge/Ge0.95Si0.05/ Ge0.9Si0.1/Si substrate markedly improves the crystallinity of and reduced the number of threading dislocations in ZnSe grown on Si.en_US
dc.language.isoen_USen_US
dc.subjectZnSe on Sien_US
dc.subjectGeSien_US
dc.subjectoff-cut Si substrateen_US
dc.subjectthreading dislocationen_US
dc.subjectMBEen_US
dc.titleGrowth of ZnSe epilayer on Si using Ge/GexSi1-x buffer structureen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.43.L811en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERSen_US
dc.citation.volume43en_US
dc.citation.issue6Ben_US
dc.citation.spageL811en_US
dc.citation.epageL813en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電子物理學系zh_TW
dc.contributor.department友訊交大聯合研發中心zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentD Link NCTU Joint Res Ctren_US
dc.identifier.wosnumberWOS:000222503500020-
dc.citation.woscount3-
顯示於類別:期刊論文


文件中的檔案:

  1. 000222503500020.pdf

若為 zip 檔案,請下載檔案解壓縮後,用瀏覽器開啟資料夾中的 index.html 瀏覽全文。